III-V/silicon photonics for on-chip and intra-chip optical interconnects

In this paper III-V on silicon-on-insulator (SOI) heterogeneous integration is reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter-chip and intra-chip optical interconnects. Two bonding technologies are used to realize the III-V/SOI integration: one based on molecular wafer bonding and the other based on DVSBCB adhesive wafer bonding. The realization of micro-disk lasers, Fabry-Perot lasers, DFB lasers, DBR lasers and modelocked lasers on the III-V/SOI material platform is discussed. Artist impression of a multi-wavelength laser based on microdisk cavities realized on a III-V/SOI heterogeneous platform and a microscope image of a realized structure. © 2010 by WILEY-VCH Verlag GmbH & Co.KGaA, Weinheim III-V/silicon photonics for on-chip and intra-chip optical interconnects Günther Roelkens1,*, Liu Liu1, Di Liang2, Richard Jones3, Alexander Fang2, Brian Koch3, and John Bowers2 1 IMEC – Ghent University, Photonics Research Group, Sint-Pietersnieuwstraat 41, 9000Ghent, Belgium 2 Electrical and Computer Engineering Department, University of California, Santa Barbara, CA93106, USA 3 Intel Corporation – Photonics Technology Labs, 2200 Mission College Blvd, SC12-326, Santa Clara, CA95054, USA Received: 22 June 2009, Revised: 14 September 2009, Accepted: 5 October 2009 Published online: 14 January 2010